Unlock Superior RF Performance with the AFT23H160-25SR3 LDMOS Power Transistor
When high efficiency, rugged performance, and broad bandwidth are essential, the AFT23H160-25SR3 LDMOS RF power transistor delivers. Designed for industrial, scientific, and medical (ISM) applications, this 160W transistor offers unmatched performance in the 2300 to 2500 MHz frequency range. Whether you’re building RF amplifiers for plasma generators, MRI systems, or RF heating equipment, the AFT23H160-25SR3 is the ideal choice.
🔍 Product Overview: AFT23H160-25SR3
The AFT23H160-25SR3, manufactured by NXP Semiconductors, is a 160-watt, 50-volt LDMOS transistor specifically optimized for CW operation across the 2.3–2.5 GHz band. Its high gain, efficiency, and ruggedness make it suitable for continuous use in demanding RF environments.
Key Specifications:
- ✅ Frequency Range: 2300–2500 MHz
- ✅ Output Power (P3dB): 160W
- ✅ Power Gain: ~17.5 dB
- ✅ Efficiency: >60%
- ✅ Supply Voltage: 50V
- ✅ Ruggedness: Handles severe load mismatches without damage
- ✅ Package: Air-cavity ceramic (NI-1230S-4L)
💡 Typical Applications
The AFT23H160-25SR3 is purpose-built for high-performance, continuous wave (CW) applications, including:
- ✅ RF Plasma Generators
- ✅ RF Heating Equipment
- ✅ MRI RF Amplifiers
- ✅ ISM Band Applications (2.3–2.5 GHz)
- ✅ Industrial Solid-State RF Sources
⚙️ Why Choose the AFT23H160-25SR3?
- ⚡ High Efficiency: Reduces system power consumption and heat
- 💪 Rugged Performance: Withstands high VSWR without degradation
- 🧩 Broadband Design: Simplifies amplifier design and reduces BOM
- 🛠 Reliability: Built for long operational lifetimes in industrial systems
- 🌍 Trusted Brand: Made by NXP, a global leader in RF semiconductors
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🛒 Ready to Buy AFT23H160-25SR3?
We offer competitive pricing, technical support, and global shipping for the AFT23H160-25SR3. Ideal for R&D, mass production, or repair needs—get the original NXP product you can trust.
📦 Contact us today to request a datasheet, bulk pricing, or place your order.
